Effect of film thickness on the electrical transport in Co₂FeAl_0.5Si_0.5 thin films

The effect of film thickness on the structural- and electrical-properties is investigated in Co 2 FeAl 0.5 Si (CFAS) thin films thickness, t, range 12–75 nm. These are grown by ultrahigh vacuum dc magnetron sputtering Si(100) substrates with SiO buffer layer (300 nm), at substrate temperature 500 ◦ C. GIXRD patterns reveal that B2 structural order decreases increasing t. t = 75 nm has sizable A2 disorder. Irrespective ρ(T, H 0) goes through a minimum T min . An elaborate quantitative analysis data, taken over 5 K to 300 K, demonstrates electron-diffuson ( e– d) weak localization (WL) effects (responsible for negative coefficient resistivity (TCR) < ) compete electron-magnon m) electron–phonon p) scattering positive TCR) contributions produce Residual resistivity, ρ 5K , d, wl, m p 0), d wl all go 50 Regardless thermal renormalization spin-wave stiffness makes significant contribution